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LED DOT MATRIX BL-M15X882XX Features: 38.00mm (1.5") 3.7 dot matrix LED display Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance.
Electrical-optical characteristics: (Ta=25 ) (Test Condition: IF=20mA)
Part No Chip Emitted Color P (nm) VF Unit:V Iv Typ Max TYP.(mcd)
Row Cathode Column Anode
Row Anode Column Cathode
BL-M15C882SG-XX
BL-M15D882SG-XX
Super Red Green
BL-M15C882EG-XX
BL-M15D882EG-XX
BL-M15C882DUG-XX
BL-M15D882DUG-XX
BL-M15C882UEUG-X X
Absolute maximum ratings (Ta=25 C) Parameter Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG Lead Soldering Temperature TSOL S
30 75 5 150
w
Max.2605 for 3 sec Max. (1.6mm from the base of the epoxy bulb)
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-XX: Surface / Lens color 0 Number Ref Surface Color White Epoxy Color Water clear
. w w
BL-M15D882UEUG-X X
lu t e b
Green Ultra Red Ultra Green Ultra Orange Ultra Green
1
Black White diffused
G
30 80 5 150

Material
AlGaInP GaP/GaP
660 570 635 570
Orange
GaAsP/Ga P GaP/GaP
AlGaInP
AlGaInP
. x
660 574 630 574
m o c
2.10 2.50 2.20 2.10 2.20 2.50 2.50 2.50 2.10 2.20 2.10 2.20 2.50 2.50 2.50 2.50
250 195 190 195 320 250 235 250
AlGaInP
AlGaInP
2 Gray Red Diffused
3 Red Green Diffused
4 Green Yellow Diffused
5
E
30 80 5 150
D
30 75 5 150
UG
30 75 5 150
UE
30 65 5 150
U nit
mA mW V mA
-40 to +80 -40 to +85
LED DOT MATRIX BL-M15X882XX
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
w
. w w
lu t e b
. x
m o c
LED DOT MATRIX BL-M15X882XX
1.0
0.5
0 350
Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green
50 FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10
1
8 64 5
23
4.0
40 30 20 10 0 1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE
w
0 10
FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT
AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE
1 5 4 2 3
10 9 8 7 6 5 4 3 2 20 30 40 50 60 70 1 1 Ipeak MAX. IDC MAX.
300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE
3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak MAX. IDC MAX. 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25
free air temperature unless otherwise specified
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|
e .b w w
2.0 1.0 0 3.0 20 40 60
lu t
1 5 B 100
80

Typical electrical-optical characteristics curves:
(A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
. x
50 40 30 20 10 0 FORWARD CURRENT(mA)
m o c
20 40 60 80 100
RELATIVE LUMINOUS INTENSITY
1
6 2,4,8,A 3 5
10,000

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